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har dwar e documentation hal ? 1002 highly precise programmable hall-effect switch edition april 25, 2014 dsh000163_001e data sheet
hal 1002 data sheet 2 april 25, 2014; dsh000163_001en micronas copyright, warranty, and limitation of liability the information and data contained in this document are believed to be accurate and reliable. the software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of micronas. all rights not expressly granted remain reserved by micronas. micronas assumes no liabilit y for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. by this publication, micronas does not assume respon- sibility for patent infringement s or other rights of third parties which may result from its use. commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. any information and data whic h may be provided in the document can and do vary in different applications, and actual performance may vary over time. all operating parameters must be validated for each customer application by customers? technical experts. any new issue of this document invalidates previous issues. micronas reserves the right to review this docu- ment and to make changes to the document?s content at any time without obligation to notify any person or entity of such revision or changes. for further advice please contact us directly. do not use our products in life-supporting systems, military, aviation, or aero space applications! unless explicitly agreed to otherwise in writing between the parties, micronas? products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. no part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of micronas. micronas trademarks ?hal micronas patents ep0 953 848, ep 0 647 970, ep 1 039 357, ep 1 575 013, ep 1 949 034 third-party trademarks all other brand and product names or company names may be trademarks of their respective companies.
3 april 25, 2014; 000163_001en micronas contents page section title hal 1002 4 1. introduction 4 1.1. major applications 41.2.features 5 2. ordering information 5 2.1. marking code 5 2.2. operating junction temperature range (t j ) 5 2.3. hall sensor package codes 6 3. functional description 6 3.1. general function 8 3.2. digital signal processing and eeprom 10 3.3. mode register 12 3.4. general calibration procedure 13 3.5. example: calibration of a position switch 14 4. specifications 14 4.1. outline dimensions 16 4.2. soldering, welding and assembly 16 4.3. pin connections and short descriptions 16 4.4. dimension of sensitive area 16 4.5. physical dimensions 17 4.6. absolute maximum ratings 18 4.6.1. storage and shelf life 18 4.7. recommended operating conditions 19 4.8. characteristics 19 4.9. magnetic characteristics 20 5. application notes 20 5.1. application circuit 20 5.2. temperature compensation 21 5.3. ambient temperature 21 5.4. emc and esd 22 6. programming 22 6.1. definition of programming pulses 22 6.2. definition of the telegram 24 6.3. telegram codes 25 6.4. number formats 25 6.5. register information 28 6.6. programming information 29 7. data sheet history
hal 1002 data sheet 4 april 25, 2014; dsh000163_001en micronas highly precise programmable hall-effect switch release note: revision bars indicate significant changes to the previous edition. 1. introduction the HAL1002 is the improved successor of the hal 1000 hall switch. the major sensor characteris- tics, the two switching points b on and b off , are pro- grammable for the application. the sensor can be pro- grammed to be unipolar or latching, sensitive to the magnetic north pole or sensitive to the south pole, with normal or with an electrically inverted output signal. several examples are shown in fig. 3?4 through fig. 3?7. the HAL1002 is based on the hal83x family and fea- tures a temperature-compensated hall plate with choppered offset compensation, an a/d converter, dig- ital signal processing, a push-pull output stage, an eeprom memory with redundancy and lock function for the calibration data, a serial interface for program- ming the eeprom, and protec tion devices at all pins. internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress effects do not degrade the sensor accuracy. the HAL1002 is programmable by modulating the supply voltage. no additional programming pin is needed. programming is simplified through the use of a 2-point calibration. calibration is accomplished by adjusting the sensor output directly to the input signal. individual adjustment of each sensor during the cus- tomer?s manufacturing process is possible. with this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be com- pensated for the final assembly. this offers a low-cost alternative for all applications that presently require mechanical adjustment or other system calibration. in addition, the temperature compensation of the hall ic can be tailored to all common magnetic materials by programming first and second order temperature coef- ficients of the hall sensor sensitivity. this enables operation over the full temperature range with constant switching points. the calculation of the individual sensor characteristics and the programming of the eeprom memory can easily be done with a pc and the application kit from micronas. the sensor is designed and produced in sub-micron cmos technology for the use in hostile industrial and automotive applications with nominal supply voltage of 5 v in the ambient temperature range from ? 40 c up to 150 c. the HAL1002 is available in the leaded package to92ut-2. 1.1. major applications due to the sensor?s versatile programming characteris- tics, the HAL1002 is the optimal system solution for applications which require very precise contactless switching: ? endpoint detection ? level switch (e.g. liquid level) ? electronic fuse (current measurement) 1.2. features ? high-precision hall switch with programmable switching points a nd switching behavior ? aec-q100 qualified ? emc and esd optimized design esd hbm performance >7 kv ? switching points programmable from ? 150 mt up to 150 mt in steps of 0.5% of the magnetic field range ? multiple programmable magnetic characteristics in a non-volatile memory ( eeprom) with redundancy and lock function ? temperature characteristics are programmable for matching all common magnetic materials ? programming through a modulation of the supply voltage ? operates from ? 40 c up to 150 c ambient temperature ? operates from 4.5 v up to 8.5 v supply voltage in specification and functions up to 11 v ? operates with static magnetic fields and dynamic magnetic fields up to 2 khz ? magnetic characteristics are extremely robust against mechanical stress effects ? overvoltage and reverse-voltage protection at all pins ? short-circuit protected push-pull output
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 5 2. ordering information 2.1. marking code the HAL1002 has a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. 2.2. operating junction temperature range (t j ) the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). a: t j = ? 40 c to +170 c the relationship between ambient temperature (t a ) and junction temperature is explained in section 5.3. on page 21. 2.3. hall sensor package codes example: HAL1002ut-a ? type: 1002 ? package: to92ut ? temperature range: t j = ? 40 c to +170 c hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ?hall sensors: ordering codes, packaging, handling?. type temperature range a HAL1002 1002a halxxxxpa-t temperature range: a package: ut for to92ut-1/-2 type: 1002
hal 1002 data sheet 6 april 25, 2014; dsh000163_001en micronas 3. functional description 3.1. general function the HAL1002 is a monolithic integrated circuit which provides a digital output signal. the sensor is based on the hal83x design. the hall plate is sensitive to magnetic north and south polarity. the external magnetic field component perpendicular to the branded side of the package generates a hall voltage. this voltage is converted to a digital value and processed in the digital signal processing unit (dsp) according to the settings of the eeprom registers. the function and the parameters for the dsp are explained in section 3.2. on page 8. the setting of the lock register disables the programming of the eeprom memory for all time. this register cannot be reset. as long as the lock register is not set, the output characteristic can be adjusted by programming the eeprom registers. the ic is addressed by modulating the supply voltage (see fig. 3?1). after detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. the digital output is switched off during the communication. internal temperature compensation circuitry and the choppered offset compensation enable the operation over the full temperature range with minimal changes of the switching points. the circuitry also rejects offset shifts due to mechanical stress from the package. the non-volatile memory cons ists of redundant eeprom cells. in addition, the HAL1002 is equipped with devices for overvoltage and reverse-voltage protection at all pins. fig. 3?1: programming with v sup modulation v out (v) 5 6 7 8 v sup (v) hal 1002 v sup gnd out v sup
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 7 fig. 3?2: HAL1002 block diagram fig. 3?3: details of eeprom registers and digital signal processing internally temperature oscillator switched 100 ? digital out v sup gnd supply eeprom memory lock control digital stabilized supply and protection devices dependent bias protection devices hall plate signal processing level detection output a/d converter mode register filter tc 5 bit tcsq 3 bit sensitivity 14 bit voq 11 bit lock 1 bit micronas register 2 bit range 3 bit eeprom memory a/d converter digital filter multiplier adder limiter digital signal processing adc-readout register 12 bit lock control 12 bit digital output other: 5 bit tc range select 2 bit low high level level 8 bit 9 bit comparator
hal 1002 data sheet 8 april 25, 2014; dsh000163_001en micronas 3.2. digital signal processing and eeprom the dsp is the main part of the sensor and performs the signal processing. the parameters for the dsp are stored in the eeprom registers. the details are shown in fig. 3?3. terminology: sensitivity: name of the register or register value sensitivity: name of the parameter eeprom registers: the eeprom registers include three groups: group 1 contains the registers for the adaption of the sensor to the magnetic system: mode for selecting the magnetic field range and filter frequency, tc and tcsq for the temperature characteristics of the magnetic sensitivity and thereby for the switching points. group 2 contains the registers for defining the switching points: sensitivity, voq, low-level, and high-level. the comparator compares the processed signal voltage with the reference values low-level and high- level. the output switches on (low) if the signal voltage is higher than the high-level, and switches off (high) if the signal falls below the low-level. several examples of different switching characteristics are shown in fig. 3?4 to fig. 3?7. ? the parameter v oq (output quiescent voltage) cor- responds to the signal voltage at b = 0 mt. ? the parameter sensitivity defines the magnetic sen- sitivity: ? the signal voltage can be calculated as follows: therefore, the switching points are programmed by setting the sensitivity, voq, low-level, and high-level registers. the available micronas software calculates the best parameter set respecting the ranges of each register. group 3 contains the micronas registers and lock for the locking of all registers. the micronas registers are programmed and locked during production and are read-only for the customer. these registers are used for oscillator frequency trim ming, a/d converter offset compensation, and several other special settings. ? v signal ? b sensitivity = v signal ?? sensitivity ?? b + v oq
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 9 fig. 3?4: HAL1002 with unipolar behavior fig. 3?5: HAL1002 with latching behavior fig. 3?6: HAL1002 with unipolar inverted behavior fig. 3?7: HAL1002 with unipolar behavior sensitive to the other magnetic polarity digital b v out b v sup high-level low-level v oq output b v out b v sup high-level low-level v oq digital output digital b v out b v sup high-level low-level v oq output digital b v out b v sup high-level low-level v oq output
hal 1002 data sheet 10 april 25, 2014; dsh000163_001en micronas 3.3. mode register the mode register contains all bits used to configure the a/d converter and the different output modes. offset correction the offset correction function can be used for handling unipolar magnetic fields or systems with high magnetic offset and small magnetic amplitudes. the offset correction register allows to adjust the digital offset after the built-in a/d-converter. the digital offset can be programmed to 50%, 0% and ? 50% of a/d-converter full-scale range. for offset correction please contact micronas service. magnetic range the range bits define the magnetic field range of the a/d converter. filter the filter bits define the ? 3 db frequency of the digital low pass filter. mode bit number 9 8 7 6 5 4 3 2 1 0 parameter range signed offset correction outputmode filter range (together with bit 9) offset correction table 3?1: mode register of the hal 1002 offset correction offset correction mode [8] mode [0] 50% 0 1 00 0 ? 50% 1 1 magnetic range range mode [9] mode [2:1] 15 mt 1 00 30 mt 0 00 table 3?2: magnetic range 40 mt 1 10 60 mt 0 01 80 mt 0 10 100 mt 0 11 150 mt 1 11 ? 3 db frequency mode [4:3] 80 hz 00 500 hz 10 1 khz 11 2 khz 01 magnetic range range mode [9] mode [2:1] table 3?2: magnetic range
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 11 output format the outputmode bits define the different output modes of HAL1002. tc register the temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. the adaptation is done by programming the tc (temperature coefficient) and the tcsq registers (quadratic temperature coefficient). thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. as a result, the output voltage characteristic can be constant over the full temperature range. the sensor can compensate for linear temperature coefficients ranging from about ? 3100 ppm/k up to 1000 ppm/k and quadratic coefficients from about -7 ppm/k2 to 2 ppm/k2. the full tc range is separated in the following four groups: tc (5 bit) and tcsq (3 bit) have to be selected individually within each of the four ranges. for example 0 ppm/k requires tc-range = 1, tc = 15 and tcsq = 1. please refer to section 5.2. on page 20 for more details. sensitivity register the sensitivity register contains the parameter for the multiplier in the dsp. sensitivity is programmable between ? 4 and 4 in steps of 0.00049. sensitivity = 1 corresponds to an increase of the signal voltage by v sup if the adc-readout increases by 2048. voq register the voq register contains the parameter for the adder in the dsp. v oq is the signal voltage without external magnetic field (b = 0 mt, respectively adc-readout = 0) and programmable from ? v sup up to v sup . for v sup = 5 v, the register can be changed in steps of 4.9 mv. note: if v oq is programmed to a negative voltage, the maximum signal voltage is limited to: reference level register the low-level and high-level registers contain the reference values of the comparator. the low-level is programmable between 0 v and v sup /2. the register can be changed in steps of 2.44 mv. the high-level is programmable between 0 v and v sup in steps of 2.44 mv. the four parameters sensitivity, v oq , low-level, and high-level define the switching points b on and b off . for calibration in the system environment, a 2-point adjustment procedure is recommended (see section 3.4.). the suitable parameter set for each sensor can be calculated indi vidually by this procedure. gp register this register can be used to store information, like production date or customer serial number. micronas will store production lot num ber, wafer number and x,y coordinates in registers gp1 to gp3. the total register contains four blocks with a length of 13 bit each.the customer can read out this information and store it in his production data base for reference or he can store own production information instead. note: this register is not a guarantee for traceability because readout of registers is not possible after locking the ic. to read/write this register it is mandatory to read/write all gp register one after the other starting with gp0. in case of a writing the regis- ters it necessary to first write all registers fol- lowed by one store sequence at the end. even if only gp0 should be changed all other gp regis- ters must first be read and the read out data must be written again to these registers. output format mode [7:5] switch (positive polarity) 100 switch (negative polarity) 101 table 3?3: outputmode tc-range [ppm/k] group ? 3100 to ? 1800 0 ? 1750 to ? 550 2 ? 500 to +450 (default value) 1 +450 to +1000 3 v signal max = v oq + v sup
hal 1002 data sheet 12 april 25, 2014; dsh000163_001en micronas lock register by setting the lsb of this 2- bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. this bit is active after the first power-off and power-on sequence after setting the lock bit. after locking of sensor is active, it will no longer respond to power supply modulation. warning: this register cannot be reset! adc-readout register this 14-bit register delivers the actual digital value of the applied magnetic field after filtering but before the signal processing. this register can be read out and is the basis for the calibration procedure of the sensor in the system environment. d/a-readout this 14-bit register delivers the actual digital value of the applied magnetic field after the signal processing. this register can be read out and is the basis for the calibration procedure of the sensor in the system environment. note: the msb and lsb are reversed compared with all the other registers. please reverse this regis- ter after readout. note: during calibration it is mandatory to select the analog output as output format.the d/a-read- out register can be read out only in the output mode. for all other modes the result read back from the sensor will be a 0. after the calibration the output format can than easily be switched to the wanted output mode. 3.4. general calibration procedure for calibration in the system environment, the application kit from micronas is recommended. it contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input or calculation of the register values. in this section, the programming of the sensor using this tool is explained. please refer to section 5. on page 24 for information about programming without this tool. for the individual calibration of each sensor in the customer?s application, a two-point adjustment is recommended (see fig. 3?1 for an example). when using the application kit, the calibration can be done in three steps: step 1: input of the registers which need not be adjusted individually the magnetic circuit, the magnetic material with its temperature characteristics, and the filter frequency, are given for this application. therefore, the values of the following registers should be identical for all sensors in the application. ?filter (according to maximum signal frequency) the 500 hz range is recommended for highest accuracy. ?range (according to the maximum magnetic field at the sensor position) ? tc and tcsq (depends on the material of the magnet and the other temperature dependencies of the application) write the appropriate settings into the HAL1002 registers. step 2: calculation of the sensor parameters fig. 3?1 shows the typical characteristics for a contactless switch. there is a mechanical range where the sensor must be switched high and where the sensor must be switched low. set the system to the calibration point where the sensor output must be high, and press the key ?readout b off ?. the result is the corresponding adc-readout value. note: the magnetic south pole on the branded side generates negative adc-readout values, the north polarity positive values. then, set the system to the calibration point where the sensor output must be low, press the key ?readout b on ? and get the second adc-readout value. now, adjust the hysteresis to the desired value. the hysteresis is the difference between the switching points and suppresses oscilla tion of the output signal. with 100% hysteresis, the sensor will switch low and high exactly at the calibration points. a lower value will adjust the switching points closer together. fig. 3?1 shows an example with 80% hysteresis.
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 13 by pressing the key ?calibrate and store?, the software will calculate the corres ponding para meters for sensitivity, voq, low-level, high-level and stores these values in the eeprom. this calibration must be done individually for each sensor. the sensor is now calibrated for the customer application. however, the programming can be changed again and again if necessary. fig. 3?1: characteristics of a position switch step 3: locking the sensor the last step is activating the lock function with the ?lock? key. the sensor is now locked and does not respond to any programming or reading commands. warning: the lock register cannot be reset! 3.5. example: calibration of a position switch the following description explains the calibration procedure using a position switch as an example: ? the mechanical switching points are given. ? temperature coefficient of the magnet: ? 500 ppm/k step 1: input of the registers which need not be adjusted individually the register values for the following registers are given for all sensors in the application: ?filter select the filter frequency: 500 hz ?range select the magnetic field range: 30 mt ?tc for this magnetic material: 6 ?tcsq for this magnetic material: 14 enter these values in the software and use the ?write and store? command to store these values permanently in the registers. step 2: calculation of the sensor parameters set the system to the calibration point where the sensor output must be high and press ?readout b off ?. set the system to the calibration point where the sensor output must be low and press ?readout b on ?. now, adjust the hysteresis to 80% and press the key ?calibrate and store?. step 3: locking the sensor the last step is activating the lock function with the ?lock? command. the sensor is now locked and does not respond to any programming or reading commands. please note that the lock function becomes effective after power-down and power-up of the hall-ic. warning: the lock register cannot be reset! sensor switched on v out position sensor switched off calibration points sensor switched on hysteresis (here 80 %)
hal 1002 data sheet 2 april 25, 2014; dsh000163_001en micronas copyright, warranty, and limitation of liability the information and data contained in this document are believed to be accurate and reliable. the software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of micronas. all rights not expressly granted remain reserved by micronas. micronas assumes no liabilit y for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. by this publication, micronas does not assume respon- sibility for patent infringement s or other rights of third parties which may result from its use. commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. any information and data whic h may be provided in the document can and do vary in different applications, and actual performance may vary over time. all operating parameters must be validated for each customer application by customers? technical experts. any new issue of this document invalidates previous issues. micronas reserves the right to review this docu- ment and to make changes to the document?s content at any time without obligation to notify any person or entity of such revision or changes. for further advice please contact us directly. do not use our products in life-supporting systems, military, aviation, or aero space applications! unless explicitly agreed to otherwise in writing between the parties, micronas? products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. no part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of micronas. micronas trademarks ?hal micronas patents ep0 953 848, ep 0 647 970, ep 1 039 357, ep 1 575 013, ep 1 949 034 third-party trademarks all other brand and product names or company names may be trademarks of their respective companies.
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 15 fig. 4?2: to92ua/ut : dimensions ammopack inline, not spread
hal 1002 data sheet 16 april 25, 2014; dsh000163_001en micronas 4.2. soldering, welding and assembly please check the micronas document ?guidelines for the assembly of hal packages? for further information about solderability, welding, assembly, and second-level packagi ng. the document is available on the micronas website or on the service portal. 4.3. pin connections and short descriptions fig. 4?3: pin configuration 4.4. dimension of sensitive area 0.25 mm x 0.25 mm 4.5. physical dimensions pin no. pin name short description 1v sup supply voltage and programming pin 2 gnd ground 3 out push-pull output and selection pin 1 2 3 v sup out gnd to92ut-1/-2 a4 0.3 mm nominal bd 0.3 mm d1 4.05 mm 0.05 mm h1 min. 22.0 mm max. 24.1 mm y 1.5 mm nominal
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 17 4.6. absolute maximum ratings stresses beyond those listed in the ?absolute maximum ra tings? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these conditions is not implied. exposure to absolute maximum rating conditions for extended periods will affect device reliability. this device contains circuitry to protect the inputs and ou tputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso- lute maximum-rated voltages to this circuit. all voltages listed are referenced to ground (gnd). symbol parameter pin no. min. max. unit condition v sup supply voltage 1 ? 8.5 11 v t < 96 h 3) v sup supply voltage 1 ? 16 16 v t < 1 h 3) v out output voltage 3 ? 516v v out ? v sup excess of output voltage over supply voltage 3,1 ? 2v i out continuous output current 3 ? 10 10 ma t sh output short circuit duration 3 ? 10 min v esd esd protection 1) 1 3 ? 8.0 ? 7.5 8.0 7.5 kv t j junction temperature under bias 2) ? 50 190 c 1) aec-q100-002 (100 pf and 1.5 k ? ) 2) for 96 h - please contact micronas for other temperature requirements 3) no cumulated stress
hal 1002 data sheet 18 april 25, 2014; dsh000163_001en micronas 4.6.1. storage and shelf life the permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 c and a maximum of 85% relative humidity. at these conditions, no dry pack is required. solderability is guaranteed for two year s from the date code on the package. 4.7. recommended operating conditions functional operation of the device beyond those indicated in the ?recommended operating conditions/characteris- tics? is not implied and may result in unpredictable behavior , reduce reliability and lifetime of the device. all voltages listed are referenced to ground (gnd). symbol parameter pin no. min. typ. max. unit condition v sup supply voltage 1 4.5 5 8.5 v i out continuous output current 3 ? 1.2 ? 1.2 ma r l load resistor 3 5.0 10 ? k ? can be pull-up or pull- down resistor (analog output only) c l load capacitance 3 0.33 100 1000 nf n prg number of eeprom pro- gramming cycles ??? 100 cycles 0c < t amb < 55c t j junction temperature range 1) ?? 40 ? 40 ? 40 ? ? ? 125 150 170 c c c for 8000 h 2) for 2000 h 2) for 1000 h 2) 1) depends on the temperature profile of the application. please contact micronas for life time calculations. 2) time values are not cumulative
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 19 4.8. characteristics at t j = ? 40 c to +170 c, v sup = 4.5v to 8.5v, after programming and locking of the device, at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v sup = 5 v. 4.9. magnetic characteristics at t j = ? 40 c to +170 c, v sup = 4.5 v to 8.5 v, gnd = 0 v after programming and locking, at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v sup = 5 v. symbol parameter pin no. min. typ. max. unit conditions i dd supply current over temperature range 1710ma v outh output high voltage 3 4.65 4.8 v v sup = 5 v , ? 1ma ?? i out ?? 1ma v outl output low voltage 3 0.2 0.35 v v sup = 5 v , ? 1ma ?? i out ?? 1ma f adc internal adc frequency ? 120 128 140 khz t j = 25 c f adc internal adc frequency over temperature range ? 110 128 150 khz v sup = 5 v t r(o) response time of output 3 ? 5 4 2 1 10 8 4 2 ms ms ms ms 3 db filter frequency = 80 hz 3 db filter frequency = 160 hz 3 db filter frequency = 500 hz 3 db filter frequency = 2 khz c l = 10 nf, time from 10% to 90% of final output voltage for a steplike signal b step from 0 mt to b max t d(o) delay time of output 3 0.1 0.5 ms c l = 10 nf t pod power-up time (time to reach stabilized output voltage) 6 5 3 2 11 9 5 3 ms ms ms ms 3 db filter frequency = 80 hz 3 db filter frequency = 160 hz 3 db filter frequency = 500 hz 3 db filter frequency = 2 khz c l = 10 nf, 90% of v out bw small signal bandwidth ( ? 3db) 3 ? 2 ? khz b ac < 10 mt; 3 db filter frequency = 2 khz r thja r thjc r thjs thermal resistance junction to ambient junction to case junction to solder point ? ? ? ? ? ? ? ? ? 235 61 159 k/w measured on a 1s0p board measured on a 1s0p board measured on a 1s1p board b on_off_res programming resolution 12 bit including sign bit b on_off_acc threshold accuracy ? 0.1 +0.1 % at t j = 25 c based on characterization b on_off_acc threshold accuracy ? 4 +4 % over operating temperature range based on characterization symbol parameter pin no. min. ty p. max. unit test conditions b offset magnetic offset 3 ? 0.5 0 0.5 mt b = 0 mt, i out = 0 ma, t j = 25 c, unadjusted sensor ? b offset magnetic offset drift ? 200 0 200 ? t b = 0 mt, i out = 0 ma v sup = 5 v; 60 mt range, 3db frequency = 500 hz, tc = 15, tcsq = 1, tc-range = 1 ? 0.65 < sensitivity < 0.65
hal 1002 data sheet 20 april 25, 2014; dsh000163_001en micronas 5. application notes 5.1. application circuit for emc protection, it is recommended to connect one ceramic 100 nf capacitor between ground and the supply voltage, and between ground and the output pin. please note that during pr ogramming, the sensor will be supplied repeatedly with the programming voltage of 12.5 v for 100 ms. all components connected to the v sup line at this time must be able to resist this volt- age. fig. 5?1: recommended application circuit for application circuits for high supply voltages, such as 24 v, please contact the micronas application ser- vice. fig. 5?2: example for an application circuit for high supply voltage 5.2. temperature compensation the relationship between the temperature coefficient of the magnet and the corresponding tc and tcsq codes for linear compensation is given in the following table. in addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. for this purpose, other tc and tcsq combi- nations are required which are not shown in the table. please contact micronas for more detailed information on this higher order temperature compensation. the hal83x and HAL1002 contain the same tempera- ture compensation circuits. if an optimal setting for the hal83x is already available, the same settings may be used for the HAL1002. out v sup gnd 100 nf HAL1002 out v sup gnd z1 HAL1002 100 nf r1 temperature coefficient of magnet (ppm/k) tc-range tc tcsq 1075 3 31 7 1000 3 28 1 900 3 24 0 750 3 16 2 675 3 12 2 575 3 8 2 450 3 4 2 400 1 31 0 250 1 24 1 150 1 20 1 50 1 16 2 01151 ? 100 1 12 0 ? 200 1 8 1 ? 300 1 4 4 ? 400 1 0 7 ? 500 1 0 0 ? 600 2 31 2 ? 700 2 28 1 ? 800 2 24 3 ? 900 2 20 6 ? 1000 2 16 7
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 21 note: the above table shows only some approximate values. micronas recommends to use the tc- calc software to find optimal settings for temper- ature coefficients. please contact micronas for more detailed information. 5.3. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). at static conditions and continuous operation, the fol- lowing equation applies: for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i sup and r th , and the max. value for v sup from the application. for v sup = 5.5 v, r th = 235 k/w, and i sup = 10 ma, the temperature difference ? t = 12.93 k. for all sensors, the junction temperature t j is speci- fied. the maximum ambient temperature t amax can be calculated as: 5.4. emc and esd please contact micronas for the detailed investigation reports with the emc and esd results. ? 1100 2 16 2 ? 1200 2 12 5 ? 1300 2 12 0 ? 1400 2 8 3 ? 1500 2 4 7 ? 1600 2 4 1 ? 1700 2 0 6 ? 1800 0 31 6 ? 1900 0 28 7 ? 2000 0 28 2 ? 2100 0 24 6 ? 2200 0 24 1 ? 2400 0 20 0 ? 2500 0 16 5 ? 2600 0 14 5 ? 2800 0 12 1 ? 2900 0 8 6 ? 3000 0 8 3 ? 3100 0 4 7 ? 3300 0 4 1 ? 3500 0 0 4 temperature coefficient of magnet (ppm/k) tc-range tc tcsq t j t a t ? + = t ? i sup v sup ? r thj ? = t amax t jmax t ? ? =
hal 1002 data sheet 22 april 25, 2014; dsh000163_001en micronas 6. programming 6.1. definition of programming pulses the sensor is addressed by modulating a serial tele- gram on the supply voltage. the sensor answers with a serial telegram on the output pin. the bits in the serial telegram have a different bit time for the v sup -line and the output. the bit time for the v sup -line is defined through the length of the sync bit at the beginning of each telegram. the bit time for the output is defined through the acknowledge bit. a logical ?0? is coded as no voltage change within the bit time. a logical ?1? is coded as a voltage change between 50% and 80% of the bit time. after each bit, a voltage change occurs. 6.2. definition of the telegram each telegram starts with the sync bit (logical 0), 3 bits for the command (com), the command parity bit (cp), 4 bits for the address (adr), and the address parity bit (ap). there are 4 kinds of telegrams: ? write a register (see fig. 6?2) after the ap bit, follow 14 data bits (dat) and the data parity bit (dp). if the telegram is valid and the command has been processed, the sensor answers with an acknowledge bit (logical 0) on the output. ? read a register (see fig. 6?3) after evaluating this command, the sensor answers with the acknowledge bit, 14 data bits, and the data parity bit on the output. ? programming the eeprom cells (see fig. 6?4) after evaluating this command, the sensor answers with the acknowledge bit. after the delay time t w , the supply voltage rises up to the programming volt- age. ? activate a sensor (see fig. 6?5) if more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. the output of all sensors have to be pulled to ground. with an activate pulse on the appropriate output pin, an individual sensor can be selected. all following commands will only be accepted from the activated sensor. fig. 6?1: definition of logical 0 and 1 bit t r t f t p0 t p0 logical 0 v suph v supl or t p0 logical 1 v suph v supl or t p0 t p1 t p1
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 23 fig. 6?2: telegram for coding a write command fig. 6?3: telegram for coding a read command table 6?1: telegram parameters symbol parameter pin min. typ. max. unit remarks v supl supply voltage for low level during programming 15 5.66 v v suph supply voltage for high level during programming 1 6.8 8.0 8.5 v t r rise time 1 ?? 0.05 ms t f fall time 1 ?? 0.05 ms t p0 bit time on v sup 1 1.7 1.75 1.9 ms t p0 is defined through the sync bit t pout bit time on output pin 3 2 3 4 ms t pout is defined through the acknowledge bit t p1 duty-cycle change for logical 1 1, 3 50 65 80 % % of t p0 or t pout v supprog supply voltage for programming the eeprom 1 12.4 12.5 12.6 v t prog programming time for eeprom 1 95 100 105 ms t rp rise time of programming voltage 1 0.2 0.5 1 ms t fp fall time of programming voltage 1 0 ? 1ms t w delay time of programming voltage after acknowledge 10.50.71 ms v act voltage for an activate pulse 3 3 4 5 v t act duration of an activate pulse 3 0.05 0.1 0.2 ms vout,deact output voltage after deactivate command 3 0 0.1 0.2 v sync com cp adr ap dat dp acknowledge v sup v out write sync com cp adr ap dat dp acknowledge v sup v out read
hal 1002 data sheet 24 april 25, 2014; dsh000163_001en micronas fig. 6?4: telegram for codi ng the eeprom programming fig. 6?5: activate pulse 6.3. telegram codes sync bit each telegram starts with the sync bit. this logical ?0? pulse defines the exact timing for t p0 . command bits (com) the command code contains 3 bits and is a binary number. table 6?2 shows the available commands and the corresponding codes for the hal 1002. command parity bit (cp) this parity bit is ?1? if the number of zeros within the 3 command bits is uneven. the parity bit is ?0?, if the number of zeros is even. address bits (adr) the address code contains 4 bits and is a binary num- ber. table 6?3 shows the available addresses for the hal 1002 registers. address parity bit (ap) this parity bit is ?1? if the number of zeros within the 4 address bits is uneven. the parity bit is ?0? if the num- ber of zeros is even. data bits (dat) the 14 data bits contain the register information. the registers use different number formats for the data bits. these formats are explained in section 6.4. in the write command, the last bits are valid. if, for example, the tc register (10 bits) is written, only the last 10 bits are valid. in the read command, the first bits are valid. if, for example, the tc register (10 bits) is read, only the first 10 bits are valid. data parity bit (dp) this parity bit is ?1? if the number of zeros within the binary number is even. the parity bit is ?0? if the num- ber of zeros is uneven. acknowledge after each telegram, the output answers with the acknowledge signal. this lo gical ?0? pulse defines the exact timing for t pout . sync com cp adr ap t prog acknowledge v sup v out erase, prom, and lock t rp t fp t w v supprog t act v out t r t f v act
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 25 6.4. number formats binary number: the most significant bit is gi ven as first, the least signif- icant bit as last digit. example: 101001 represents 41 decimal. signed binary number: the first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). example: 0101001 represents +41 decimal 1101001 represents ? 41 decimal two?s-complement number: the first digit of positive numbers is ?0?, the rest of the number is a binary number. negative numbers start with ?1?. in order to calculate the absolute value of the number, calculate the complement of the remaining digits and add ?1?. example: 0101001 represents +41 decimal 1010111 represents ? 41 decimal 6.5. register information low level ? the register range is from 0 up to 255. ? the register value is calculated by: high level ? the register range is from 0 up to 511. ? the register value is calculated by: voq ? the register range is from ? 1024 up to 1023. ? the register value is calculated by: table 6?2: available commands command code explanation read 2 read a register write 3 write a register prom 4 program all nonvolatile re gisters (except the lock bits) erase 5 erase all nonvolatile registers (except the lock bits) low level low-level voltage 2 ? v sup ------------------------------------------------------- - 255 ? = high level high-level voltage v sup ----------------------------------------------- - 511 ? = voq v oq v sup ------------ - 1024 ? =
hal 1002 data sheet 26 april 25, 2014; dsh000163_001en micronas sensitivity ? the register range is from ? 8192 up to 8191. ? the register value is calculated by: tc ? the tc register range is from 0 up to 1023. ? the register value is calculated by: mode ? the register range is from 0 up to 1023 and contains the settings for filter, range, outputmode and offset correction: signoc = sign offset correction d/a-readout ? this register is read only. ? the register range is from 0 up to 16383. deactivate ? this register can only be written. ? the register has to be written with 2063 decimal (80f hexadecimal) for the deactivation. ? the sensor can be reset with an activate pulse on the output pin or by switching off and on the supply voltage. sensitivity sensitivity 2048 ? = tc group 256 tcvalue 8 tcsqvalue + ? + ? = mode range 512 signoc 256 ? + ? outputmode + 32 filter 8 range 2 offsetcorrection + ? + ? + ? = table 6?3: available register addresses register code data bits format customer remark low level 1 8 binary read/write/program low voltage high level 2 9 binary read/write/program high voltage voq 3 11 two?s compl. binary read/write/program output quiescent voltage sensitivity 4 14 signed binary read/write/program mode 5 10 binary read/write/program range, filter, output mode, offset correction settings lockr 6 2 binary read/write/program lock bit gp registers 1..3 8 3x13 binary read/write/program 1) d/a-readout 9 14 binary read bit sequence is reversed during read tc 11 10 binary read/write/program bits 0 to 2 tcsq bits 3 to 7 tc bits 7 to 9 tc range gp register 0 12 13 binary read/write/program 1) deactivate 15 12 binary write deactivate the sensor 1) to read/write this register it is mandatory to read/write all gp register one after the other starting with gp0. in case of a writing the registers it is necessary to first write all registers followed by one store sequence at the end. even if only gp0 should be changed all other gp registers must first be read and the read out data must be writ- ten again to these registers.
data sheet hal 1002 micronas april 25, 2014; dsh000163_001en 27 table 6?4: data formats register char dat3 dat2 dat1 dat0 bit 15 14 13 12 11 10 09 08 07 06 05 04 03 02 01 00 low level write read ? ? ? ? ? v ? v ? v ? v ? v ? v v v v v v ? v ? v ? v ? v ? v ? high level write read ? ? ? ? ? v ? v ? v ? v ? v v v v v v v v v v ? v ? v ? v ? v ? voq write read ? ? ? ? ? v ? v ? v v v v v v v v v v v v v v v v v v ? v ? v ? sensitiv- ity write read ? ? ? ? v v v v v v v v v v v v v v v v v v v v v v v v v v v v mode write read ? ? ? ? ? v ? v ? v ? v v v v v v v v v v v v v v ? v ? v ? v ? lockr write read ? ? ? ? ? v ? v ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? v ? v ? gp 1..3 registers write read ? ? ? ? ? v v v v v v v v v v v v v v v v v v v v v v v v v v ? d/a- readout 1) read ?? v vvvvvvvvvvvvv tc write read ? ? ? ? ? v ? v ? v ? v v v v v v v v v v v v v v ? v ? v ? v ? gp 0 register write read ? ? ? ? ? v v v v v v v v v v v v v v v v v v v v v v v v v v ? deacti- vate write ?? ? ? 100000001111 v: valid, ? : ignore, bit order: msb first 1) lsb first
hal 1002 data sheet 28 april 25, 2014; dsh000163_001en micronas 6.6. programming information if the content of any register (except the lock registers) is to be changed, the desired value must first be writ- ten into the corresponding ram register. before read- ing out the ram register again, the register value must be permanently stored in the eeprom. permanently storing a value in the eeprom is done by first sending an erase command followed by sending a prom command. the address within the erase and prom commands must be zero. erase and prom act on all registers in parallel. if all hal 1002 registers are to be changed, all writing commands can be sent one after the other, followed by sending one erase and prom command at the end. during all communication sequences, the customer has to check if the communication with the sensor was successful. this means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. if the micronas programmer board is used, the customer has to check the error flags sent from the programmer board. note: for production and qualification tests it is man- datory to set the lock bit after final adjustment and programming of hal 1002. the lock func- tion is active after the next power-up of the sen- sor. the success of the lock process shall be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. electrostatic discharges (esd) may disturb the programming pulses. please take precautions against esd.
hal 1002 data sheet 29 april 25, 2014; dsh000163_001en micronas micronas gmbh hans-bunte-strasse 19 ? d-79108 freiburg ? p.o. box 840 ? d-79008 freiburg, germany tel. +49-761-517-0 ? fax +49-761-517-2174 ? e-mail: docservi ce@micronas.com ? internet: www.micronas.com 7. data sheet history 1. preliminary data sheet ?hal 1002 highly precise programmable hall-effect switch?, dec. 13, 2013, pd000214_001en. first release of the preliminary data sheet. 2. data sheet ?hal 1002 highly precise programma- ble hall-effect switch?, april 25, 2014, dsh000163_001en. first release of the data sheet. major changes: ? block diagram updated ? parameter values for programming resolution and threshold accuracy added

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